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Other articles related with "interface defect"：
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77303 |
Haoran Zhu(祝浩然), Weifeng Xie(谢伟锋), Xin Liu(刘欣), Yang Liu(刘杨), Jinli Zhang(张金利), and Xu Zuo(左旭) |
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First-principles study of non-radiative carrier capture by defects at amorphous-SiO2/Si(100) interface |
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Chin. Phys. B
2023 Vol.32 (7): 77303-077303
[Abstract]
(150)
[HTML 1 KB]
[PDF 1766 KB]
(108)
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47103 |
Yi-Jie Zhang(张轶杰), Zhi-Peng Yin(尹志鹏), Yan Su(苏艳), De-Jun Wang(王德君) |
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Passivation of carbon dimer defects in amorphous SiO2/4H-SiC (0001) interface: A first-principles study |
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Chin. Phys. B
2018 Vol.27 (4): 47103-047103
[Abstract]
(581)
[HTML 1 KB]
[PDF 3197 KB]
(231)
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108801 |
Hadi Bashiri, Mohammad Azim Karami, Shahramm Mohammadnejad |
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Improvement in IBC-silicon solar cell performance by insertion of highly doped crystalline layer at heterojunction interfaces |
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Chin. Phys. B
2017 Vol.26 (10): 108801-108801
[Abstract]
(586)
[HTML 1 KB]
[PDF 389 KB]
(236)
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76102 |
Fan Tian-You(范天佑), Xie Ling-Yun(解凌云), Fan Lei(范蕾), and Wang Qing-Zhao(王清昭) |
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Interface of quasicrystal and crystal |
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Chin. Phys. B
2011 Vol.20 (7): 76102-076102
[Abstract]
(1403)
[HTML 1 KB]
[PDF 877 KB]
(733)
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